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| e PTB 20228 6.5 Watts, 1.62-1.66 GHz RF Power Transistor Description The 20228 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6.5 Watts, 1.62-1.66 GHz Class AB Characteristics 40% Collector Efficiency at 6.5 Watts Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated Typical Power Out and Efficiency vs. Power In 10 8 80 64 48 Output Power (Watts) 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Efficiency (%) 202 28 LO TC OD E VCC = 26 V ICQ = 40 mA f = 1.661 GHz 32 16 0 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 1.0 19.7 0.112 -40 to +150 8.9 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20228 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IB = 0 A, IC = 5 mA, RBE = 22 IC = 0 A, IE =5 mA VCE = 5 V, IC = 250 mA VCB = 26 V, Ie = 0, f = 1 MHz Symbol V(BR)CEO V(BR)CES V(BR)CER V(BR)EBO hFE Cob Min 20 50 50 4 20 Typ -- -- -- 5 40 6.1 Max -- -- -- -- -- Units Volts Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.626 & 1.661 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.661 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA, f = 1.626 & 1.661 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA, f = 1.661 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8.5 6.5 40 Typ 9.5 -- -- Max -- -- -- Units dB Watts % -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA) Z Source Z Load Frequency GHz 1.626 1.640 1.661 R 1.32 1.27 1.21 Z Source jX -2.29 -1.12 0.47 R 7.02 6.72 6.46 Z Load jX 21.19 21.98 23.17 Z0 = 50 2 e Typical Performance Gain vs. Frequency 12 11 PTB 20228 (as measured in a broadband circuit) Gain (dB) 10 9 VCC = 26 V 8 7 1.62 IC = 40 mA Pin = 0.7 W 1.63 1.64 1.65 1.66 1.67 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20228 Uen Rev. C 09-28-98 3 |
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